K4S51163PF-F1L Datasheet, Mobile-sdram, Samsung semiconductor

K4S51163PF-F1L Features

• Mobile-sdram 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full p

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K4S51163PF-F1L

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Samsung semiconductor

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📄 Datasheet

Description:

8m x 16bit x 4 banks mobile-sdram. The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated wit

K4S51163PF-F1L Application

• Applications ORDERING INFORMATION Part No. K4S51163PF-Y(P)F75 K4S51163PF-Y(P)F90 K4S51163PF-Y(P)F1L Max Freq. 133MHz(CL=3),83MHz(CL=2) 111MHz(CL=3

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K4S51163PF-F1L

Samsung semiconductor

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