Part number:
K4S51163PF-F1L
Manufacturer:
Samsung semiconductor
File Size:
114.14 KB
Description:
8m x 16bit x 4 banks mobile-sdram.
* 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with address key programs.
* All inputs
K4S51163PF-F1L Datasheet (114.14 KB)
K4S51163PF-F1L
Samsung semiconductor
114.14 KB
8m x 16bit x 4 banks mobile-sdram.
📁 Related Datasheet
K4S51163PF-F90 - 8M x 16Bit x 4 Banks Mobile-SDRAM
(Samsung semiconductor)
K4S51163PF-Y(P)F
8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES
1.8V power supply. LVCMOS patible with multiplexed address. Four banks operation. MRS c.
K4S51163PF-Y - 8M x 16Bit x 4 Banks Mobile-SDRAM
(Samsung semiconductor)
K4S51163PF-Y(P)F
8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES
1.8V power supply. LVCMOS patible with multiplexed address. Four banks operation. MRS c.
K4S51163PF-YF - 8M x 16Bit x 4 Banks Mobile-SDRAM
(Samsung semiconductor)
K4S51163PF-Y(P)F
8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES
1.8V power supply. LVCMOS patible with multiplexed address. Four banks operation. MRS c.
K4S511632B-TC75 - 512Mb B-die SDRAM Specification
(Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.1 February 2004
* Samsung Electronics reserves the right to .
K4S511632B-TCL75 - 512Mb B-die SDRAM Specification
(Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.1 February 2004
* Samsung Electronics reserves the right to .
K4S511632D - 512Mb D-die SDRAM
(Samsung)
K4S510432D K4S510832D K4S511632D
Synchronous DRAM
512Mb D-die SDRAM Specification
54 TSOP-II with Lead-Free
(RoHS pliant)
INFORMATION IN THIS DO.
K4S511632M - 512Mbit SDRAM
(Samsung semiconductor)
K4S511632M
CMOS SDRAM
512Mbit SDRAM
8M x 16bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.3 May. 2002
Samsung Electronics reserves the right to c.
K4S511632M-TC - 512Mbit SDRAM
(Samsung semiconductor)
K4S511632M
CMOS SDRAM
512Mbit SDRAM
8M x 16bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.3 May. 2002
Samsung Electronics reserves the right to c.