K4S51163PF-F90 8M x 16Bit x 4 Banks Mobile-SDRAM

Samsung semiconductor

Description

K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM .
The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high.

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Datasheet Specifications

Part number: K4S51163PF-F90
Manufacturer: Samsung semiconductor
File Size: 114.14 KB
Datasheet: K4S51163PF-F90_Samsungsemiconductor.pdf
Description: 8M x 16Bit x 4 Banks Mobile-SDRAM

Features

* 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with address key programs.
* All inputs

Applications

* ORDERING INFORMATION Part No. K4S51163PF-Y(P)F75 K4S51163PF-Y(P)F90 K4S51163PF-Y(P)F1L Max Freq. 133MHz(CL=3),83MHz(CL=2) 111MHz(CL=3),83MHz(CL=2) 111MHz(CL=3)
* 1,66MHz(CL=2) LVCMOS 54 FBGA Pb (Pb Free) Interface Package - F : Low Power, Commercial Temperature(-25°C ~ 70°C) Notes : 1. In case

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K4S51163PF-F90 16Bit Banks Mobile-SDRAM Samsung semiconductor

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