K4S51163PF-F90 Datasheet, Mobile-sdram, Samsung semiconductor

K4S51163PF-F90 Features

• Mobile-sdram 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full p

PDF File Details

Part number:

K4S51163PF-F90

Manufacturer:

Samsung semiconductor

File Size:

114.14kb

Download:

📄 Datasheet

Description:

8m x 16bit x 4 banks mobile-sdram. The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated wit

K4S51163PF-F90 Application

• Applications ORDERING INFORMATION Part No. K4S51163PF-Y(P)F75 K4S51163PF-Y(P)F90 K4S51163PF-Y(P)F1L Max Freq. 133MHz(CL=3),83MHz(CL=2) 111MHz(CL=3

TAGS

K4S51163PF-F90

Samsung semiconductor

📁 Related Datasheet

K4S51163PF-F1L - 8M x 16Bit x 4 Banks Mobile-SDRAM (Samsung semiconductor)
K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS patible with multiplexed address. Four banks operation. MRS c.

K4S51163PF-Y - 8M x 16Bit x 4 Banks Mobile-SDRAM (Samsung semiconductor)
K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS patible with multiplexed address. Four banks operation. MRS c.

K4S51163PF-YF - 8M x 16Bit x 4 Banks Mobile-SDRAM (Samsung semiconductor)
K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS patible with multiplexed address. Four banks operation. MRS c.

K4S511632B-TC75 - 512Mb B-die SDRAM Specification (Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to .

K4S511632B-TCL75 - 512Mb B-die SDRAM Specification (Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to .

K4S511632D - 512Mb D-die SDRAM (Samsung)
K4S510432D K4S510832D K4S511632D Synchronous DRAM 512Mb D-die SDRAM Specification 54 TSOP-II with Lead-Free (RoHS pliant) INFORMATION IN THIS DO.

K4S511632M - 512Mbit SDRAM (Samsung semiconductor)
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c.

K4S511632M-TC - 512Mbit SDRAM (Samsung semiconductor)
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c.

K4S511632M-TL1H - 512Mbit SDRAM (Samsung semiconductor)
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c.

K4S511632M-TL1L - 512Mbit SDRAM (Samsung semiconductor)
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c.