Part number:
K4S51163PF-F90
Manufacturer:
Samsung semiconductor
File Size:
114.14 KB
Description:
8m x 16bit x 4 banks mobile-sdram.
The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c
K4S51163PF-F90 Features
* 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with address key programs.
* All inputs
K4S51163PF-F90_Samsungsemiconductor.pdf
Datasheet Details
K4S51163PF-F90
Samsung semiconductor
114.14 KB
8m x 16bit x 4 banks mobile-sdram.
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