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K4S51163PF-F90 Datasheet - Samsung semiconductor

8M x 16Bit x 4 Banks Mobile-SDRAM

K4S51163PF-F90 Features

* 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle with address key programs.

* All inputs

K4S51163PF-F90 General Description

The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4S51163PF-F90 Datasheet (114.14 KB)

Preview of K4S51163PF-F90 PDF

Datasheet Details

Part number:

K4S51163PF-F90

Manufacturer:

Samsung semiconductor

File Size:

114.14 KB

Description:

8m x 16bit x 4 banks mobile-sdram.

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K4S51163PF-F90 16Bit Banks Mobile-SDRAM Samsung semiconductor

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