The HYNIX HY27(U/S)F(08/16)1G2M series is a 128Mx8bit with spare 4Mx8 bit capacity.
The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can
( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No.
0.0 1) Initial Draft.
1) Correct Fig.10 Sequential out cycle after read 2) Add the text to Fig.1, Table.1, Table.2 - text : IO15 - IO8 (x16 only) 3) Delete ‘3.2 Page program NOTE 1.
- Note : if possible it is better to remove this constrain 4) Change the text ( page
HY27UF081G2M Features
* SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - Manufact
HY27UF081G2M_HynixSemiconductor.pdf
Datasheet Details
HY27UF081G2M
Hynix Semiconductor
420.81 KB
(hy27uf(08/16)1g2m / hy27sf(08/16)1g2m) 1gbit (128mx8bit/64mx16bit) nand flash memory.
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