Datasheet Details
Part number:
HY27UF081G2M
Manufacturer:
Hynix Semiconductor
File Size:
420.81 KB
Description:
(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
HY27UF081G2M_HynixSemiconductor.pdf
Datasheet Details
Part number:
HY27UF081G2M
Manufacturer:
Hynix Semiconductor
File Size:
420.81 KB
Description:
(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
Applications
* NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ. ) STATUS REGISTER ELECTRONIC SIGNATURE - Manufacturer Code - Device Code SUPPLY VOLTAGE - 3.3V device: VCC = 2.7 to 3.6V : HY27UFXX1G2M CHIP ENABLEHY27UF081G2M Distributors
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