HY27UF081G2M Datasheet - Hynix Semiconductor

HY27UF081G2M (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory

The HYNIX HY27(U/S)F(08/16)1G2M series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can.

( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 1) Initial Draft. 1) Correct Fig.10 Sequential out cycle after read 2) Add the text to Fig.1, Table.1, Table.2 - text : IO15 - IO8 (x16 only) 3) Delete ‘3.2 Page program NOTE 1. - Note : if possible it is better to remove this constrain 4) Change the text ( page.

HY27UF081G2M Features

* SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - Manufact

HY27UF081G2M_HynixSemiconductor.pdf