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HY27UF081G2M Datasheet, memory equivalent, Hynix Semiconductor

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Part number: HY27UF081G2M

Manufacturer: Hynix Semiconductor

File Size: 420.81KB

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Description: (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory

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PDF File Details

Part number: HY27UF081G2M

Manufacturer: Hynix Semiconductor

File Size: 420.81KB

Download: 📄 Datasheet

Description: (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory

HY27UF081G2M Features and benefits

SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pino.

HY27UF081G2M Application

NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ER.

HY27UF081G2M Description

The HYNIX HY27(U/S)F(08/16)1G2M series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage .

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TAGS

HY27UF081G2M
HY27UF08
161G2M
HY27SF08
161G2M
1Gbit
128Mx8bit
64Mx16bit
NAND
Flash
Memory
Hynix Semiconductor

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