HY27UG084G2M

(HY27UGxx Series) 2G-Bit NAND Flash

Hynix Semiconductor

HY27UG084G2M Features

* 9) Change DC Characteristics (Table 8) - Operating Current ICC1 Typ Before 0.4 After 20 25 Max 40 45 ICC2 Typ 20 25 Max 40 45 ICC3 Typ 20 25 Max 40 45 Sep. 16. 2005 Preliminary 10) Change AC Characteristics - Errata is deleted. tWC Before After 60ns 50ns tWP 35ns 25ns tWH 20ns 15ns - tR is change

HY27UG084G2M General Description

The HYNIX HY27UG(08/16)4G(2/D)M series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so .

HY27UG084G2M Datasheet (468.31 KB)

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HY27UG084G2M

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Hynix Semiconductor

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(hy27ugxx series) 2g-bit nand flash.
w e e Document h Title S / 256Mx16bit) NAND Flash Memory 4Gbit (512Mx8bit a at .D History Revision w w Revision No. 0.0 U 4 t . m o c Preliminary.

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HY27UG084G2M HY27UGxx Series 2G-Bit NAND Flash Hynix Semiconductor

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HY27UG084G2M Features

HY27UG084G2M General Description

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