H9DA4GH4JJAMCR - NAND 4Gb(x16) / mobile DDR 4Gb(x32 2CS)

Hynix

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Datasheet Details

Part number	H9DA4GH4JJAMCR
Manufacturer	Hynix
File Size	4.02 MB
Description	NAND 4Gb(x16) / mobile DDR 4Gb(x32 2CS)
Datasheet	H9DA4GH4JJAMCR_Hynix.pdf

H9DA4GH4JJAMCR Product details

Description

and is subject to change without notice. 64Mb x32 2CS 2CKE) DDR Revision History Revision No.0.1 1.0 1.1 History Initial Draft - 4Gb NAND Flash D-Die - 4Gb mobile DDR (2 x 2Gb Mobile DDDR A-Die) First ver

Features

[ MCP ].
Operation Temperature - -30oC ~ 85oC.
Packcage - 137-ball FBGA - 10.5x13.0mm2, 1.2t, 0.8mm pitch - Lead & Halogen Free [ NAND Flash ].
Multiplane Architecture.
Supply Voltage - Vcc = 1.7 - 1.95 V.
Memory Cell Array - (1K + 32) words x 64 pages x 4096 blocks.
Page Size - (1K+ 32 spare) Words.
Block Size - (64K + 2K spare) Words.
Page Read / Program - Random access : 25us (max. ) - Sequential access : 45ns (min. ) - Page program time : 250us (typ. ) -.

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Published: Jun 27, 2013 |