H9DP32A4JJBCGR - 4GB eNAND Flash(x8) + 4Gb Mobile DDR

Hynix

Datasheet Details

and is subject to change without notice.

[ CI-MCP ].
Operation Temperature - (-25)oC ~ 85oC.
Package - 153-ball FBGA - 11.5x13.0mm2, 1.0t, 0.5mm pitch - Lead & Halogen Free [ e-NAND ] [ DDR SDRAM ].
Packaged NAND flash memory with MultiMediaCard interface.
e-NAND system specification, compliant with V4.41.
Full backward compatibility with previous eNAND system specification.
Bus mode - High-speed eMMC protocol. - Three different data bus widths: 1 bit, 4 bits,8 bits. - Data transfer rate: up to 104Mbyt.

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Published: Nov 30, 2015 |