Datasheet4U.com

HY5117800C - Fast Page Mode DRAM

Hyundai Electronics

📥 Download Datasheet

HY5117800C Datasheet Preview — Preview of HY5117800C PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: HY5117800C
Manufacturer: Hyundai Electronics
File Size: 265.61 KB
Datasheet: HY5117800C_HyundaiElectronics.pdf
Description: Fast Page Mode DRAM

HY5117800C Product details

Description

This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs.

Features

are access time(60, 70 or 80ns) and refresh cycle(2K ref. or 4K ref. ) and power consumption (Normal or Low power with self refresh). Hyundai’s advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high reliability.

📁 Similar Datasheet

HY5110A - N-Channel Enhancement Mode MOSFET (HUAYI)
HY5110NA2W - N-Channel Enhancement Mode MOSFET (HUAYI)
HY5110W - N-Channel Enhancement Mode MOSFET (HUAYI)
HY5116164B - Extended Data Out mode (Hyundai)
HY5116164C - Extended Data Out mode (Hyundai)
HY5118164B - Extended Data Out mode (Hyundai)
HY5118164C - Extended Data Out mode (Hyundai)
HY5100 - 2 Input / 3 Output Digital Delay Line (Hytek)

Hyundai Electronics HY5117800C-similar datasheet

HY5117800B - Fast Page Mode DRAM
HY5117804B - Extended Data Out Mode DRAM
HY5117810 - 2M x 8-Bit CMOS DRAM
HY5117100 - 16M x 1-Bit CMOS DRAM
HY5117100A - 16M x 1-Bit CMOS DRAM
HY5117400 - 4M x 4-Bit CMOS DRAM