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HY5110W - N-Channel Enhancement Mode MOSFET

HY5110W Description

HY5110W/A N-Channel Enhancement Mode MOSFET .
S D G TO-247-3L S D G TO-3P-3L Applications. Power Management for Inverter Systems.

HY5110W Features

* 100V/316A RDS(ON)=2.1 m Ω (typ. ) @ VGS=10V
* Avalanche Rated
* Reliable and Rugged

HY5110W Applications

* Power Management for Inverter Systems. D G N-Channel MOSFET S Ordering and Marking Information W A HY5110 HY5110 YYÿ XXXJWW G YYÿ XXXJWW G Package Code W : TO-247-3L Date Code YYXXX WW A : TO-3P-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain mol

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Datasheet Details

Part number
HY5110W
Manufacturer
HUAYI
File Size
2.62 MB
Datasheet
HY5110W-HUAYI.pdf
Description
N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET HUAYI
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