HY5110W N-Channel Enhancement Mode MOSFET

HUAYI

Description

HY5110W/A N-Channel Enhancement Mode MOSFET .
S D G TO-247-3L S D G TO-3P-3L Applications. Power Management for Inverter Systems.

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Datasheet Specifications

Part number: HY5110W
Manufacturer: HUAYI
File Size: 2.62 MB
Datasheet: HY5110W-HUAYI.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* 100V/316A RDS(ON)=2.1 m Ω (typ. ) @ VGS=10V
* Avalanche Rated
* Reliable and Rugged

Applications

* Power Management for Inverter Systems. D G N-Channel MOSFET S Ordering and Marking Information W A HY5110 HY5110 YYÿ XXXJWW G YYÿ XXXJWW G Package Code W : TO-247-3L Date Code YYXXX WW A : TO-3P-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain mol

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HY5110W N-Channel Enhancement Mode MOSFET HUAYI

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