HUAYI Datasheet | Specifications & PDF Download

HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

(57 views)

HY3506P/B N-Channel Enhancement Mode MOSFET Features • 60V/190A RDS(ON) = 3.5 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

(38 views)

HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

(29 views)

HYG006N04LS1B6 Single N-Channel Enhancement Mode MOSFET Feature  40V/530A RDS(ON)= 0.55mΩ(typ.) @VGS = 10V RDS(ON)=0.72 mΩ(typ.)@VGS = 4.5V  100%

(29 views)

HYG067N07NQ1P/B/PS Feature  68V/80A RDS(ON)= 6.5mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

(14 views)

HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V  100% Avalanc

(14 views)

HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V  100% Avalanc

(13 views)

HY1404S N-Channel Enhancement Mode MOSFET Feature  40V/14A RDS(ON)= 9.3mΩ(typ.)@VGS = 10V RDS(ON)= 11.7mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested

(10 views)

HYG400P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature  -100V/-40A RDS(ON)= 42mΩ(typ.) @ VGS = -10V RDS(ON)= 48mΩ(typ.) @ VGS = -4.5V  100% A

(10 views)

HYG067N07NQ1P/B/PS Feature  68V/80A RDS(ON)= 6.5mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

(10 views)

3456789  #$%&'#( ) 0*+,-*./ ) .B0C1D2C3E45F6G7H0ÿ102C8;HI9ÿ3;<=1ÿ6?ÿ+@27A2+ ) 0HDJCKDHÿCEIÿ0LMMHI ) NHCIÿOPHHÿCEIÿ@PHHEÿ1HBJFHQÿ.BCJDCKDH 30RS2ÿTR8

(10 views)

HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V  100% Avalanc

(9 views)

HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala

(9 views)

HYG010N06NS1TA Feature  60V/465A RDS(ON)=0.75 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS

(9 views)

HYG210P06LQ1C2 Single P-Channel Enhancement Mode MOSFET Feature  -60V/-40A  RDS(ON)= 20mΩ(typ.) @VGS = -10V RDS(ON)= 26mΩ(typ.) @VGS = -4.5V  100

(8 views)

HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V  100% Avalanc

(8 views)

HY1103S N-Channel Enhancement Mode MOSFET Feature z 30V/11A RDS(ON)=9.5mΩ(typ.)@VGS = 10V RDS(ON)=11.5mΩ(typ.)@VGS = 4.5V z 100% Avalanche Tested z

(8 views)

DEQING HUAYING ELECTRONICS CO.,LTD. APPROVAL SHEET SAW BANDPASS FILTER PART NO.: NDFG023-2350SA Product Type: SAW Filter Part NO.: NDFG023-2350SA V

(8 views)

HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V  100% Avalanc

(7 views)

HY025N08B6 N-Channel Enhancement Mode MOSFET Feature  80V/310A RDS(ON)= 2mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen

(7 views)