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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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HYG012N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature  30V/180A RDS(ON)= 0.9 mΩ(typ.) @VGS = 10V RDS(ON)=1.3 mΩ(typ.) @VGS = 4.5V  100%

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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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HYG030N03LQ1D Single N-Channel Enhancement Mode MOSFET Feature  30V/100A RDS(ON)= 2.5 mΩ(typ.) @VGS = 10V RDS(ON)= 3.5 mΩ(typ.) @VGS = 4.5V  100%

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HYG400P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature  -100V/-40A RDS(ON)= 42mΩ(typ.) @ VGS = -10V RDS(ON)= 48mΩ(typ.) @ VGS = -4.5V  100% A

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HYG006N04LS1B6 Single N-Channel Enhancement Mode MOSFET Feature  40V/530A RDS(ON)= 0.55mΩ(typ.) @VGS = 10V RDS(ON)=0.72 mΩ(typ.)@VGS = 4.5V  100%

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HYG020N06LS1P/B Microelectronics N-Channel Enhancement Mode MOSFET Feature  60V/250A RDS(ON)= 2 mΩ(typ.) @VGS = 10V RDS(ON)= 2.5 mΩ(typ.) @VGS = 4

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HY1906C2 Single N-Channel Enhancement Mode MOSFET Feature  60V/70A RDS(ON)= 5.7 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged 

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HYG046N04LQ1C2 Single N-Channel Enhancement Mode MOSFET Feature  40V/70A RDS(ON)= 4.3mΩ(typ.)@VGS = 10V RDS(ON)= 6.9mΩ(typ.)@VGS = 4.5V  100% Aval

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HYG260P03LR1S P-Channel Enhancement Mode MOSFET FeatureDescription z -30V/-8A RDS(ON) = 21.6mΩ(typ.) @VGS =- 10V RDS(ON) = 42 mΩ(typ.) @VGS = -4.5V

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HY040N08P/B Feature  85V/180A RDS(ON)= 3.6mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead Free and GreenDevices Available (R

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HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V  100% Avalanc

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HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  30V/150A RDS(ON)= 1.3mΩ (typ.) @VGS = 10V RDS(ON)= 2.0mΩ (typ.) @VGS =

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HYG009N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  40V/200A RDS(ON)= 0.75mΩ (typ.) @VGS = 10V RDS(ON)= 1.05mΩ (typ.) @VGS

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HYG065N07NS1C2 N-Channel Enhancement Mode MOSFET Feature  70V/70A RDS(ON)=5.3 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Ha

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HYG025N06LS1P Single N-Channel Enhancement Mode MOSFET Feature  60V/160A RDS(ON)= 2.5 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.7 mΩ (typ.) @ VGS = 4.5V  1

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HY15P03C2 Single P-Channel Enhancement Mode MOSFET Feature  -30V/-60A RDS(ON)= 4.8mΩ(typ.) @VGS =-10V RDS(ON)= 6.8mΩ(typ.) @VGS =-4.5V  Reliable a

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HYG170ND03LA1C1 Dual N-Channel Enhancement Mode MOSFET Feature  30V/24A RDS(ON)= 15.6 mΩ(typ) @VGS = 10V RDS(ON)= 20.5 mΩ(typ) @VGS = 4.5V  100% A

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HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V  100% Avalanc

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HYG082N03LR1S N-Channel Enhancement Mode MOSFET Feature  30V/11A RDS(ON)=7.3mΩ(typ.)@VGS = 10V RDS(ON)=11 mΩ(typ.)@VGS = 4.5V  100% Avalanche Test

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