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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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HY3506P/B N-Channel Enhancement Mode MOSFET Features • 60V/190A RDS(ON) = 3.5 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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HYG006N04LS1B6 Single N-Channel Enhancement Mode MOSFET Feature  40V/530A RDS(ON)= 0.55mΩ(typ.) @VGS = 10V RDS(ON)=0.72 mΩ(typ.)@VGS = 4.5V  100%

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HYG045P03LQ1C2 Single P-Channel Enhancement Mode MOSFET Feature Description  -30V/-80A RDS(ON)= 3.8 mΩ (typ.) @VGS = -10V RDS(ON)= 6.2 mΩ (typ.) @V

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HYG067N07NQ1P/B/PS Feature  68V/80A RDS(ON)= 6.5mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

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HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  30V/150A RDS(ON)= 1.3mΩ (typ.) @VGS = 10V RDS(ON)= 2.0mΩ (typ.) @VGS =

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HYG035N10NS2P/B Feature  100V/180A RDS(ON)=3.2mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

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HYG042N10NS1P/B Feature  100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

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HY5110NA2W Feature ⚫ 100V/295A RDS(ON)=2.4mΩ (typ.) @ VGS = 10V ⚫ 100% Avalanche Tested ⚫ Reliable and Rugged ⚫ Lead-Free and Green Devices Available

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HYG035N10NS1P/B Feature  100V/180A RDS(ON)=3.2mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

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DEQING HUAYING ELECTRONICS CO.,LTD. APPROVAL SHEET SAW BANDPASS FILTER PART NO.: NDFG023-2350SA Product Type: SAW Filter Part NO.: NDFG023-2350SA V

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HYG030N03LQ1P/B Feature  30V/100A RDS(ON)=2.8mΩ(typ.)@VGS = 10V RDS(ON)=3.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-

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HYG032N08NS1P/B Feature  80V/180A RDS(ON)=3 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable

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HY1904P/B/M Feature  40V/90A RDS(ON)= 4.7mΩ(typ.)@VGS = 10V RDS(ON)= 5.7mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead Fre

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HYG025N06LS1P/B Single N-Channel Enhancement Mode MOSFET Feature  60V/160A RDS(ON)= 2.5 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.8 mΩ (typ.) @ VGS = 4.5V 

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HYG110N11LS1C2 Single N-Channel Enhancement Mode MOSFET Feature  115V/60A RDS(ON)= 9.8 mΩ (typ.) @ VGS = 10V RDS(ON)= 14.5 mΩ (typ.) @ VGS = 4.5V 

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HYG064N08NA1P/B Feature  80V/120A RDS(ON)= 6.4mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailabl

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