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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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HYG067N07NQ1P/B/PS Feature  68V/80A RDS(ON)= 6.5mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

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HY3506P/B N-Channel Enhancement Mode MOSFET Features • 60V/190A RDS(ON) = 3.5 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanch

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HYG110P04LQ1 D/U/V P-Channel Enhancement Mode MOSFET Feature  -40V/-50A RDS(ON)= 9.1mΩ(typ.)@VGS = -10V RDS(ON)= 12mΩ(typ.)@VGS = -4.5V  100% aval

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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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HYG006N04LS1B6 Single N-Channel Enhancement Mode MOSFET Feature  40V/530A RDS(ON)= 0.55mΩ(typ.) @VGS = 10V RDS(ON)=0.72 mΩ(typ.)@VGS = 4.5V  100%

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HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala

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HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  30V/150A RDS(ON)= 1.3mΩ (typ.) @VGS = 10V RDS(ON)= 2.0mΩ (typ.) @VGS =

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HYG210P06LQ1C2 Single P-Channel Enhancement Mode MOSFET Feature  -60V/-40A  RDS(ON)= 20mΩ(typ.) @VGS = -10V RDS(ON)= 26mΩ(typ.) @VGS = -4.5V  100

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HYG260P03LR1S P-Channel Enhancement Mode MOSFET FeatureDescription z -30V/-8A RDS(ON) = 21.6mΩ(typ.) @VGS =- 10V RDS(ON) = 42 mΩ(typ.) @VGS = -4.5V

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HY1607AP/M/B/MF/PS/PM Features • 68V/80A R = 6.5m(typ.) @ V =10V DS(ON) GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Gre

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HYG067N07NQ1P/B/PS Feature  68V/80A RDS(ON)= 6.5mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

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HYG170ND03LR1S Dual N-Channel Enhancement Mode MOSFET Feature  30V/9.5A RDS(ON)= 12.9 mΩ(typ.) @VGS = 10V RDS(ON)= 19.3 mΩ(typ.) @VGS = 4.5V  100%

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HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala

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HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala

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HYG023N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  30V/125A RDS(ON)= 1.5mΩ (typ.) @VGS = 10V RDS(ON)= 2.1mΩ (typ.) @VGS =

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HY040N08P/B Feature  85V/180A RDS(ON)= 3.6mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead Free and GreenDevices Available (R

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HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V  100% Avalanc

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HYG080N03LA1S N-Channel Enhancement Mode MOSFET Feature  30V/12A RDS(ON)=7.3mΩ(typ.)@VGS = 10V RDS(ON)=10.1mΩ(typ.)@VGS = 4.5V  100% Avalanche Tes

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