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HYG025N04NA1D Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG025N04NA1D Single N-Channel Enhancement Mode MOSFET Feature  40V/125A RDS(ON)= 2.5mΩ (typ.

Datasheet Details

Part number HYG025N04NA1D
Manufacturer HUAYI
File Size 1.35 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG025N04NA1D-HUAYI.pdf

General Description

G DS Applications  Load Switch  Lithium battery protect board Single N-Channel MOSFET Ordering and Marking Information D G025N04 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

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