• Part: HYG025N04NA1D
  • Description: N-Channel Enhancement Mode MOSFET
  • Manufacturer: HUAYI
  • Size: 1.35 MB
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Datasheet Summary

Single N-Channel Enhancement Mode MOSFET Feature - 40V/125A RDS(ON)= 2.5mΩ (typ.) @VGS = 10V - 100% Avalanche Tested - Reliable and Rugged - Halogen- Free Devices Available Pin Description G DS Applications - Load Switch - Lithium battery protect board Single N-Channel MOSFET Ordering and Marking Information G025N04 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow...