HYG025N04LQ1U Datasheet | HUAYI

HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature - 40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen Free and Green Devices Available (Ro HS pliant) Pin Description GDS TO-252-2L TO-251-3L TO-251-3S Applications - Switching Application - Power Management for DC/DC - Battery Protection Ordering and Marking Information N-Channel MOSFET D G025N04 XYMXXXXXX U G025N04 XYMXXXXXX V G025N04 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L Date Code XYMXXXXXX V:TO-251-3S Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish; which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. .hymexa. V1.0...