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HYG025N06LS1B Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG025N06LS1P/B Single N-Channel Enhancement Mode MOSFET Feature  60V/160A RDS(ON)= 2.5 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.8 mΩ (typ.) @ VGS = 4.

Datasheet Details

Part number HYG025N06LS1B
Manufacturer HUAYI
File Size 1.45 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG025N06LS1B-HUAYI.pdf

General Description

TO-220FB-3L TO-263-2L Applications  High Frequency Point-of-Load Synchronous Buck Converter  Power Tool Application Ordering and Marking Information Single N-Channel MOSFET P G025N06 XYMXXXXXX B G025N06 XYMXXXXXX Package Code P: TO-220FB-3L B: TO-263-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;

which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HYG025N06LS1B Distributor