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HYG025N06LS1C2 Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG025N06LS1C2 Single N-Channel Enhancement Mode MOSFET Feature  60V/170A RDS(ON)= 2.1 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.2 mΩ (typ.) @ VGS = 4.

Datasheet Details

Part number HYG025N06LS1C2
Manufacturer HUAYI
File Size 1.46 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG025N06LS1C2-HUAYI.pdf

General Description

DDDD DDDD SSSG GSSS Pin1 PDFN8L(5x6) Applications  High Frequency Point-of-Load Synchronous Buck Converter  Power Tool Application  Networking DC-DC Power System Ordering and Marking Information Single N-Channel MOSFET C2 G025N06 XYMXXXXXX Package Code C2: PDFN8L(5x6) Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;

which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HYG025N06LS1C2 Distributor