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HYG025N04LQ1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V
100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available
(RoHS Compliant)
Pin Description
GDS TO-252-2L
GDS
GDS
TO-251-3L
TO-251-3S
Applications
Switching Application Power Management for DC/DC
Battery Protection
Ordering and Marking Information
N-Channel MOSFET
D G025N04
XYMXXXXXX
U G025N04
XYMXXXXXX
V G025N04
XYMXXXXXX
Package Code D: TO-252-2L U: TO-251-3L Date Code XYMXXXXXX
V:TO-251-3S
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
HYG025N04LQ1D Datasheet
