HYG013N04NA1B6 datasheet by HUAYI.
| Part number | HYG013N04NA1B6 |
|---|---|
| Datasheet | HYG013N04NA1B6-HUAYI.pdf |
| File Size | 1.32 MB |
| Manufacturer | HUAYI |
| Description | N-Channel Enhancement Mode MOSFET |
|
|
TO-263-6L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
| Part Number | Description |
|---|---|
| HYG013N04NR1B6 | N-Channel Enhancement Mode MOSFET |
| HYG013N03LS1C2 | Single N-Channel MOSFET |
| HYG010N06NS1TA | N-Channel Enhancement Mode MOSFET |
| HYG011N04LS1C2 | Single N-Channel Enhancement Mode MOSFET |
| HYG011N04LS1TA | N-Channel Enhancement Mode MOSFET |
| HYG012N03LR1C2 | N-Channel Enhancement Mode MOSFET |
| HYG014N03LR1B | N-Channel Enhancement Mode MOSFET |
| HYG014N03LR1P | N-Channel Enhancement Mode MOSFET |
| HYG015N03LR1B | N-Channel Enhancement Mode MOSFET |
| HYG015N03LR1P | N-Channel Enhancement Mode MOSFET |
