HYG013N04NR1B6
HYG013N04NR1B6 is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Single N-Channel Enhancement Mode MOSFET
Feature
- 40V/377A RDS(ON)= 1.1 mΩ(typ.) @VGS = 10V
- 100% Avalanche Tested
- Reliable and Rugged
- Halogen- Free Devices Available
Pin Description
Pin 1
Pin 7
TO-263-6L
Applications
- Load Switch
- Lithium battery protect board
Pin 1
Pin 2,3,5,6,7 Single N-Channel MOSFET
Ordering and Marking Information
B6
G013N04
XYMXXXXXX
Package Code B6: TO-263-6L
Date Code XYMXXXXXX
Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice.
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