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HYG013N04NR1B6 Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG013N04NR1B6 Single N-Channel Enhancement Mode MOSFET Feature  40V/377A RDS(ON)= 1.1 mΩ(typ.

Datasheet Details

Part number HYG013N04NR1B6
Manufacturer HUAYI
File Size 1.51 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG013N04NR1B6-HUAYI.pdf

General Description

Pin 1 Pin 7 TO-263-6L Applications  Load Switch  Lithium battery protect board Pin 1 Pin 2,3,5,6,7 Single N-Channel MOSFET Ordering and Marking Information B6 G013N04 XYMXXXXXX Package Code B6: TO-263-6L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

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