Datasheet Summary
Single N-Channel Enhancement Mode MOSFET
Feature Description
- 30V/150A RDS(ON)= 1.3mΩ (typ.) @VGS = 10V RDS(ON)= 2.0mΩ (typ.) @VGS = 4.5V
- 100% Avalanche Tested
- Reliable and Rugged
- Halogen- Free Devices Available
Pin Description
DDDD
DDDD
SSSG
GSSS
Pin1 PDFN5- 6-8L
Applications
- Switching Application
- Power Management for DC/DC
- Battery Protection
Single N-Channel MOSFET
Ordering and Marking Information
C2
G013N03
XYMXXXXXX
Package Code C2: PDFN5- 6-8L
Date Code XYMXXXXXX
Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS. HUAYI lead-free products...
