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HYG013N03LS1C2 - Single N-Channel Enhancement Mode MOSFET

General Description

Pin Description 30V/150A RDS(ON)= 1.3mΩ (typ.) @VGS = 10V DDDD DDDD RDS(ON)= 2.0mΩ (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available SSSG GSSS Pin1 PDFN5 6-8L eTek Applications rc Switching Application P

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Datasheet Details

Part number HYG013N03LS1C2
Manufacturer ChipSourceTek
File Size 1.22 MB
Description Single N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG013N03LS1C2 Datasheet

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HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description  30V/150A RDS(ON)= 1.3mΩ (typ.) @VGS = 10V DDDD DDDD RDS(ON)= 2.0mΩ (typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available SSSG GSSS Pin1 PDFN5*6-8L eTek Applications rc  Switching Application  Power Management for DC/DC u  Battery Protection Single N-Channel MOSFET o Ordering and Marking Information ipS C2 G013N03 hXYMXXXXXX Package Code C2: PDFN5*6-8L Date Code XYMXXXXXX C Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi- Nation finish;which are fully compliant with RoHS.