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HYG045N04LA1D - N-Channel Enhancement Mode MOSFET

General Description

G DS Applications Load Switch Lithium battery protect board Single N-Channel MOSFET Ordering and Marking Information D G045N04 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin pl

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Datasheet Details

Part number HYG045N04LA1D
Manufacturer HUAYI
File Size 1.32 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG045N04LA1D Datasheet

Full PDF Text Transcription (Reference)

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HYG045N04LA1D Single N-Channel Enhancement Mode MOSFET Feature  40V/77A RDS(ON)= 4.5 mΩ (typ.) @VGS = 10V RDS(ON)= 5.2 mΩ (typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Pin Description G DS Applications  Load Switch  Lithium battery protect board Single N-Channel MOSFET Ordering and Marking Information D G045N04 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.