• Part: HYG045N04LA1D
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 1.32 MB
Download HYG045N04LA1D Datasheet PDF
HUAYI
HYG045N04LA1D
HYG045N04LA1D is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Single N-Channel Enhancement Mode MOSFET Feature - 40V/77A RDS(ON)= 4.5 mΩ (typ.) @VGS = 10V RDS(ON)= 5.2 mΩ (typ.) @VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen- Free Devices Available Pin Description G DS Applications - Load Switch - Lithium battery protect board Single N-Channel MOSFET Ordering and Marking Information G045N04 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. .hymexa....