• Part: HYG045N03LA1C1
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 1.31 MB
Download HYG045N03LA1C1 Datasheet PDF
HUAYI
HYG045N03LA1C1
HYG045N03LA1C1 is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
N-Channel Enhancement Mode MOSFET Feature - 30V/50A RDS(ON)=3.9 mΩ (typ.) @VGS = 10V RDS(ON)=5.2 mΩ (typ.) @VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen Free and Green Devices Available (Ro HS pliant) Pin Description Pin1 Applications - Switching Application - Battery Protection Single N-Channel MOSFET Ordering and Marking Information C1 G045N03 XYMXXXXXX Package Code C1: DFN3- 3-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish; which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. .hymexa....