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HYG045N03LA1C1
N-Channel Enhancement Mode MOSFET
Feature
30V/50A RDS(ON)=3.9 mΩ (typ.) @VGS = 10V RDS(ON)=5.2 mΩ (typ.) @VGS = 4.5V
100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available
(RoHS Compliant)
Pin Description
Pin1
Applications
Switching Application Battery Protection
Single N-Channel MOSFET
Ordering and Marking Information
C1 G045N03
XYMXXXXXX
Package Code C1: DFN3*3-8L
Date Code XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HYG045N03LA1C1 Datasheet
