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HYG045N03LA1C1 Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Datasheet Details

Part number HYG045N03LA1C1
Manufacturer HUAYI
File Size 1.31 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG045N03LA1C1-HUAYI.pdf

HYG045N03LA1C1 Overview

HYG045N03LA1C1 N-Channel Enhancement Mode MOSFET Feature  30V/50A RDS(ON)=3.9 mΩ (typ.) @VGS = 10V RDS(ON)=5.2 mΩ (typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS pliant) Pin Pin1 Applications  Switching Application  Battery Protection Single N-Channel MOSFET Ordering and Marking Information C1 G045N03 XYMXXXXXX Package Code C1: DFN3*3-8L Date Code XYMXXXXXX Note: HUAYI...

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