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HYG045N03LA1D - N-Channel Enhancement Mode MOSFET

General Description

S GD Applications Load Switch Li-battery protection Single N-Channel MOSFET Ordering and Marking Information D G045N03 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Term

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Datasheet Details

Part number HYG045N03LA1D
Manufacturer HUAYI
File Size 1.06 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG045N03LA1D Datasheet

Full PDF Text Transcription (Reference)

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HYG045N03LA1D Single N-Channel Enhancement Mode MOSFET Feature  30V/80A RDS(ON)= 3.8 mΩ(typ.) @VGS = 10V RDS(ON)= 5.1 mΩ(typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Pin Description S GD Applications  Load Switch  Li-battery protection Single N-Channel MOSFET Ordering and Marking Information D G045N03 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.