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HYG042N10NS1P - N-Channel Enhancement Mode MOSFET

General Description

TO-220FB-3L TO-263-2L Ordering and Marking Information P G042N10 XYMXXXXXX B G042N10 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;

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Datasheet Details

Part number HYG042N10NS1P
Manufacturer HUAYI
File Size 863.79 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG042N10NS1P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HYG042N10NS1P/B Feature  100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  DC-DC Converters N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Ordering and Marking Information P G042N10 XYMXXXXXX B G042N10 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.