HYG042N10NS1B datasheet by HUAYI.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | HYG042N10NS1B |
|---|---|
| Datasheet | HYG042N10NS1B HYG042N10NS1P Datasheet (PDF) |
| File Size | 863.79 KB |
| Manufacturer | HUAYI |
| Description | N-Channel Enhancement Mode MOSFET |
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HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully pliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
| Part Number | Description |
|---|---|
| HYG042N10NS1P | N-Channel Enhancement Mode MOSFET |
| HYG045N03LA1C1 | N-Channel Enhancement Mode MOSFET |
| HYG045N03LA1C2 | N-Channel Enhancement Mode MOSFET |
| HYG045N03LA1D | N-Channel Enhancement Mode MOSFET |
| HYG045N04LA1D | N-Channel Enhancement Mode MOSFET |
| HYG045N10NS1B | N-Channel Enhancement Mode MOSFET |
| HYG045N10NS1P | N-Channel Enhancement Mode MOSFET |
| HYG045P03LQ1C2 | Single P-Channel Enhancement Mode MOSFET |
| HYG045P03LQ1D | P-Channel Enhancement Mode MOSFET |
| HYG045P03LQ1U | P-Channel Enhancement Mode MOSFET |
