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HYG016N04LS1W Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG016N04LS1W N-Channel Enhancement Mode MOSFET Feature  40V/290A RDS(ON)= 1.2 mΩ (typ.) @VGS = 10V RDS(ON)= 1.6 mΩ (typ.) @VGS = 4.

Datasheet Details

Part number HYG016N04LS1W
Manufacturer HUAYI
File Size 1.40 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG016N04LS1W-HUAYI.pdf

General Description

TO-247A-3L Applications  Switching application  Inverters  Power Tool Ordering and Marking Information W G016N04 XYMXXXXXX N-Channel MOSFET Package Code W:TO-247A-3L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;

which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HYG016N04LS1W Distributor