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HYG016N04NR1P - N-Channel Enhancement Mode MOSFET

General Description

TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P G016N04 XYMXXXXXX B G016N04 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation fi

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Datasheet Details

Part number HYG016N04NR1P
Manufacturer HUAYI
File Size 1.35 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG016N04NR1P Datasheet

Full PDF Text Transcription (Reference)

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HYG016N04NR1P/B N-Channel Enhancement Mode MOSFET Feature  45V/240A RDS(ON)= 1.4 mΩ(typ.) @VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Switching application  Li-battery protection Pin Description TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P G016N04 XYMXXXXXX B G016N04 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.