Datasheet4U Logo Datasheet4U.com

HYG022N10NS1TA Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG022N10NS1TA Feature  100V/249A RDS(ON)=2.2 mΩ (typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS pliant) N-Channel Enhancement Mode MOSFET.

Datasheet Details

Part number HYG022N10NS1TA
Manufacturer HUAYI
File Size 1.21 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG022N10NS1TA-HUAYI.pdf

General Description

Tab Pin 8 Pin 1 TOLL Applications  Switching application  Power management for inverter systems  Battery management Tab Pin 1 Ordering and Marking Information Pin 2,3,4,5,6,7,8 N-Channel MOSFET TA G022N10 XYMXXXXXX Package Code TA:TOLL Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HYG022N10NS1TA Distributor