• Part: HYG020N04NA1P
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 1.38 MB
Download HYG020N04NA1P Datasheet PDF
HUAYI
HYG020N04NA1P
HYG020N04NA1P is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature - 40V/220A RDS(ON)= 1.8 mΩ(typ.) @VGS = 10V - 100% Avalanche Tested - Reliable and Rugged - Lead-Free and Green Devices Available (Ro HS pliant) Applications - Switching application - Li-battery protection Pin Description TO-220FB-3L TO-263-2L TO-3PM-3L Ordering and Marking Information G020N04 XYMXXXXXX G020N04 XYMXXXXXX G020N04 XYMXXXXXX Package Code P :TO-220FB-3L PL:TO-3PM-3L Date Code XYMXXXXXX N-Channel MOSFET B : TO-263-2L Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. .hymexa. 1 V1.0 HYG020N04NA1P/B/PL Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source...