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HYG020N04NA1P - N-Channel Enhancement Mode MOSFET

General Description

TO-220FB-3L TO-263-2L TO-3PM-3L Ordering and Marking Information P G020N04 XYMXXXXXX B G020N04 XYMXXXXXX PL G020N04 XYMXXXXXX Package Code P :TO-220FB-3L PL:TO-3PM-3L Date Code XYMXXXXXX N-Channel MOSFET B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach mate

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Datasheet Details

Part number HYG020N04NA1P
Manufacturer HUAYI
File Size 1.38 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG020N04NA1P Datasheet

Full PDF Text Transcription (Reference)

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HYG020N04NA1P/B/PL N-Channel Enhancement Mode MOSFET Feature  40V/220A RDS(ON)= 1.8 mΩ(typ.) @VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Switching application  Li-battery protection Pin Description TO-220FB-3L TO-263-2L TO-3PM-3L Ordering and Marking Information P G020N04 XYMXXXXXX B G020N04 XYMXXXXXX PL G020N04 XYMXXXXXX Package Code P :TO-220FB-3L PL:TO-3PM-3L Date Code XYMXXXXXX N-Channel MOSFET B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.