• Part: HYG020N06LS1B
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 587.85 KB
Download HYG020N06LS1B Datasheet PDF
HUAYI
HYG020N06LS1B
HYG020N06LS1B is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
- Part of the HYG020N06LS1P comparator family.
Feature - 60V/250A RDS(ON)= 2 mΩ(typ.) @VGS = 10V RDS(ON)= 2.5 mΩ(typ.) @VGS = 4.5V - 100% Avalanche Tested - 100% DVDS - Reliable and Rugged - Halogen Free and Green Devices Available (Ro HS pliant) Pin Description TO-220FB-3L TO-263-2L Applications - DC-DC Switched-mode Power Supplies - Battery Management System - Inverter - Electroplate Power Ordering and Marking Information Single N-Channel MOSFET P HYG020N06 XYMXXXXXX B HYG020N06 XYMXXXXXX Package Code P:TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI halogen free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI halogen free products meet or exceed the halogen free require-ments of IPC/JEDEC J-STD-020 for MSL classification at halogen free peak reflow temperature. HUAYI defines “Green” to mean halogen free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. http://.hymexa./ 1 V2.0 HYG020N06LS1P/B Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage Junction Temperature Range TSTG Storage Temperature Range Source Current-Continuous(Body Diode)...