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HYG020N06LS1B - N-Channel Enhancement Mode MOSFET

Download the HYG020N06LS1B datasheet PDF. This datasheet also covers the HYG020N06LS1P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

TO-220FB-3L TO-263-2L Applications DC-DC Switched-mode Power Supplies Battery Management System Inverter Electroplate Power Ordering and Marking Information D G S Single N-Channel MOSFET P HYG020N06 XYMXXXXXX B HYG020N06 XYMXXXXXX Package Code P:TO-220FB-3L Date Code X

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Note: The manufacturer provides a single datasheet file (HYG020N06LS1P-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG020N06LS1B
Manufacturer HUAYI
File Size 587.85 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG020N06LS1B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HYG020N06LS1P/B Microelectronics N-Channel Enhancement Mode MOSFET Feature  60V/250A RDS(ON)= 2 mΩ(typ.) @VGS = 10V RDS(ON)= 2.5 mΩ(typ.) @VGS = 4.5V  100% Avalanche Tested  100% DVDS  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description TO-220FB-3L TO-263-2L Applications  DC-DC Switched-mode Power Supplies  Battery Management System  Inverter  Electroplate Power Ordering and Marking Information D G S Single N-Channel MOSFET P HYG020N06 XYMXXXXXX B HYG020N06 XYMXXXXXX Package Code P:TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI halogen free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.