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HYG020N06LS1P Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG020N06LS1P/B Microelectronics N-Channel Enhancement Mode MOSFET Feature  60V/250A RDS(ON)= 2 mΩ(typ.) @VGS = 10V RDS(ON)= 2.5 mΩ(typ.) @VGS = 4.

Datasheet Details

Part number HYG020N06LS1P
Manufacturer HUAYI
File Size 587.85 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG020N06LS1P-HUAYI.pdf

General Description

TO-220FB-3L TO-263-2L Applications  DC-DC Switched-mode Power Supplies  Battery Management System  Inverter  Electroplate Power Ordering and Marking Information D G S Single N-Channel MOSFET P HYG020N06 XYMXXXXXX B HYG020N06 XYMXXXXXX Package Code P:TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI halogen free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

HUAYI halogen free products meet or exceed the halogen free require-ments of IPC/JEDEC J-STD-020 for MSL classification at halogen free peak reflow temperature.

HUAYI defines “Green” to mean halogen free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

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