HYG020N06LS1P
HYG020N06LS1P is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature
- 60V/250A RDS(ON)= 2 mΩ(typ.) @VGS = 10V RDS(ON)= 2.5 mΩ(typ.) @VGS = 4.5V
- 100% Avalanche Tested
- 100% DVDS
- Reliable and Rugged
- Halogen Free and Green Devices Available
(Ro HS pliant)
Pin Description
TO-220FB-3L
TO-263-2L
Applications
- DC-DC Switched-mode Power Supplies
- Battery Management System
- Inverter
- Electroplate Power
Ordering and Marking Information
Single N-Channel MOSFET
P HYG020N06 XYMXXXXXX
B HYG020N06 XYMXXXXXX
Package Code P:TO-220FB-3L
Date Code XYMXXXXXX
B:TO-263-2L
Note: HUAYI halogen free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI halogen free products meet or exceed the halogen free require-ments of IPC/JEDEC J-STD-020 for MSL classification at halogen free peak reflow temperature. HUAYI defines “Green” to mean halogen free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. http://.hymexa./ 1
V2.0
HYG020N06LS1P/B
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
Junction Temperature Range
TSTG
Storage Temperature Range
Source Current-Continuous(Body Diode)...
