F1455 Datasheet, Vga, IDT

F1455 Features

• Vga
• Broadband 1400 MHz to 2300 MHz
• 32.8 dB max gain
• 3.9 dB NF @ max gain (2000 MHz)
• 29.5 dB total gain control range, 0.5 dB step
• < 2 dB ov

PDF File Details

Part number:

F1455

Manufacturer:

IDT

File Size:

2.68MB

Download:

📄 Datasheet

Description:

Tx digital vga. The F1455 is a High Gain / High Linearity 1400 MHz to 2300 MHz TX Digital Variable Gain Amplifier used in transmitter applications. T

F1455 Application

• Applications The F1455 TX DVGA provides 32.8 dB maximum gain with +38.5 dBm OIP3 and 3.9 dB noise figure. Up to 29.5 dB gain control is achieved us

TAGS

F1455

IDT

📁 Related Datasheet

F1451 - TX Digital VGA (Renesas)
TX Digital VGA 450MHz to 1100MHz F1451 Datasheet Description The F1451 is a High Gain / High Linearity 450MHz to 1100MHz TX Digital Variable Gain Am.

F1451 - TX Digital VGA (IDT)
T TX Digital VGA 700 MHz to 1100 MHz F1451 Datasheet Description The F1451 is a High Gain / High Linearity 700 MHz to 1100 MHz TX Digital Variable G.

F1456 - TX Digital Variable Gain Amplifier (Renesas)
F1456 TX Digital VGA 1500 MHz to 2950 MHz Datasheet The F1456 is a High Gain / High Linearity 1500MHz to 2950MHz TX Digital Variable Gain Amplifier .

F1456 - TX Digital VGA (IDT)
T TX Digital VGA 2100 MHz to 2950 MHz F1456 Datasheet Description The F1456 is a High Gain / High Linearity 2100 MHz to 2950 MHz TX Digital Variable.

F1400A - Clock Oscillator (MTRONPTI)
.. F1400A Series 9x14 mm FR-4, 5.0 Volt, Sinewave, Clock Oscillator • Former Product OBSOLETE Pin Connections X O 95 .

F1400NC18 - Chopper Diode (WESTCODE)

    WESTCODE Date:- 19 Apr, 2001 Data Sheet Issue:- 1a Provisional Data IGBT Series/Chopper Diode Type F1400NC18 Absolute Maximum Ratings.

F1401 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F1404ZS - Power MOSFET (IRF)
PD - 94634B IRF1404Z IRF1404ZS IRF1404ZL Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Swi.

F1410 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F1415 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .