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2N6110 - PNP Transistor

2N6110 Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6110 .
DC Current Gain- : hFE = 30-150@ IC= -3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -30V(Min). Minimum Lot-to-Lot variation.

2N6110 Applications

* Power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Curren

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Datasheet Details

Part number
2N6110
Manufacturer
INCHANGE
File Size
193.07 KB
Datasheet
2N6110-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2N6110-like datasheet