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2N6109 - PNP Transistor

2N6109 Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6109 .
DC Current Gain- : hFE = 30-150@ IC= -2. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min). Minimum Lot-to-Lot variations f.

2N6109 Applications

* Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A

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Datasheet Details

Part number
2N6109
Manufacturer
INCHANGE
File Size
193.34 KB
Datasheet
2N6109-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2N6109-like datasheet