Datasheet Details
- Part number
- 2N6109
- Manufacturer
- INCHANGE
- File Size
- 193.34 KB
- Datasheet
- 2N6109-INCHANGE.pdf
- Description
- PNP Transistor
2N6109 Description
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6109 .
DC Current Gain-
: hFE = 30-150@ IC= -2.
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -50V(Min).
Minimum Lot-to-Lot variations f.
2N6109 Applications
* Designed for use in general-purpose amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
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