2N6111 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6111 .
DC Current Gain- : hFE = 30-150@ IC= -3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -30V(Min). Minimum Lot-to-Lot variations for.

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Datasheet Specifications

Part number: 2N6111
Manufacturer: INCHANGE
File Size: 192.90 KB
Datasheet: 2N6111-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A

2N6111 Distributors

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2N6111 PNP Transistor INCHANGE

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