2N6129 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6129 .
DC Current Gain- : hFE = 20-100@ IC= 2. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min). Complement to Type 2N6132. M.

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Datasheet Specifications

Part number: 2N6129
Manufacturer: INCHANGE
File Size: 190.04 KB
Datasheet: 2N6129-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Ba

2N6129 Distributors

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2N6129 NPN Transistor INCHANGE

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