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2N6102 NPN Transistor

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Description

isc Silicon NPN Power Transistor 2N6102 .
DC Current Gain - : hFE = 20-80@ IC= 5A. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min). Minimum Lot-to-Lot variations for r.

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Datasheet Specifications

Part number
2N6102
Manufacturer
INCHANGE
File Size
184.04 KB
Datasheet
2N6102-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 40 V VCER Collector-Emitter Voltage RBE= 100Ω 45 V VEBO Emitter-Base Voltage

2N6102 Distributors

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