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2N6281 Silicon NPN Power Transistor

2N6281 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : VCEO=150V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operation AP.

2N6281 Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=2

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Datasheet Details

Part number
2N6281
Manufacturer
INCHANGE
File Size
222.97 KB
Datasheet
2N6281-INCHANGE.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor INCHANGE
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