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2N6280 - HIGH-POWER NPN SILICON TRANSISTORS

This page provides the datasheet information for the 2N6280, a member of the 2N6278 HIGH-POWER NPN SILICON TRANSISTORS family.

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Datasheet Details

Part number 2N6280
Manufacturer ETC
File Size 325.68 KB
Description HIGH-POWER NPN SILICON TRANSISTORS
Datasheet download datasheet 2N6280 Datasheet
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Full PDF Text Transcription

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2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifier and switching circuit applications. • High Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) - 2N6278 = 120 Vdc (Min) - 2N6279 = 140 Vdc (Min) - 2N6280 = 150 Vdc (Min) - 2N6281 • High DC Current Gain hFE = 30-120@ IC = 20 Adc = 10 (Min) @ IC = 50 Adc • Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 20 Adc • Fast Switching Times @ IC = 20 Adc tr = 0.351ls (Max) ts = 0.8 Ils (Max) tf = 0.
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