2N6278 Datasheet (ETC) - HIGH-POWER NPN SILICON TRANSISTORS

2N6278, HIGH-POWER NPN SILICON TRANSISTORS

2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifier and switching circuit applications.

High Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) - 2N6278 = 120 Vdc (Min) - 2N6279 = 140 Vdc (Min) - 2N6280 = 150 Vdc (Min) - 2N6281 High DC Current Gain hFE = 30-120@ IC = 20 Adc = 10 (Min) @ IC = 50 Adc Low Coliector Emitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 20 Adc