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2N6279, 2N6278 Datasheet - ETC

2N6279 HIGH-POWER NPN SILICON TRANSISTORS

2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifier and switching circuit applications. High Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) - 2N6278 = 120 Vdc (Min) - 2N6279 = 140 Vdc (Min) - 2N6280 = 150 Vdc (Min) - 2N6281 High DC Current Gain hFE = 30-120@ IC = 20 Adc = 10 (Min) @ IC = 50 Adc Low Coliector Emitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 20 Adc

2N6278-ETC.pdf

This datasheet PDF includes multiple part numbers: 2N6279, 2N6278. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

2N6279, 2N6278

Manufacturer:

ETC

File Size:

325.68 KB

Description:

High-power npn silicon transistors.

Note:

This datasheet PDF includes multiple part numbers: 2N6279, 2N6278.
Please refer to the document for exact specifications by model.

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TAGS

2N6279 2N6278 HIGH-POWER NPN SILICON TRANSISTORS ETC

2N6279 Distributor