2N6282 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlingtion Power Transistor .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE = 750 (Min) @ IC = 10 Adc. Collector-Emitter Sustaining Voltage- VCEO(SU.

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Datasheet Specifications

Part number: 2N6282
Manufacturer: INCHANGE
File Size: 219.17 KB
Datasheet: 2N6282-INCHANGE.pdf
Description: NPN Transistor

Applications

* Intended for general purpose amplifier and low frequency switching applications, such as linear and switching industrial equipment. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Vol

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2N6282 NPN Transistor INCHANGE

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