2N6283 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlingtion Power Transistor .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE = 750 (Min) @ IC =10 Adc. Collector-Emitter Sustaining Voltage- VCEO(SUS.

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Datasheet Specifications

Part number: 2N6283
Manufacturer: INCHANGE
File Size: 196.75 KB
Datasheet: 2N6283-INCHANGE.pdf
Description: NPN Transistor

Applications

* Intended for general purpose amplifier and low frequency switching applications, such as linear and switching industrial equipment. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Vo

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2N6283 NPN Transistor INCHANGE

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