2N6286 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlingtion Power Transistor .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE = 750 (Min) @ IC = -10 Adc. Collector-Emitter Sustaining Voltage- VCEO(S.

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Datasheet Specifications

Part number: 2N6286
Manufacturer: INCHANGE
File Size: 190.56 KB
Datasheet: 2N6286-INCHANGE.pdf
Description: PNP Transistor

Applications

* Intended for general purpose amplifier and low frequency switching applications, such as linear and switching industrial equipment. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base V

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2N6286 PNP Transistor INCHANGE

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