Datasheet4U Logo Datasheet4U.com

2N6287 PNP Transistor

2N6287 Description

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6287 .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE = 750 (Min) @ IC = -10 Adc. Collector-Emitter Sustaining Voltage- VCEO(S.

2N6287 Applications

* Intended for general purpose amplifier and low frequency switching applications, such as linear and switching industrial equipment. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base

📥 Download Datasheet

Preview of 2N6287 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2N6287
Manufacturer
INCHANGE
File Size
191.75 KB
Datasheet
2N6287-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2N6280 - HIGH-POWER NPN SILICON TRANSISTORS (ETC)
  • 2N6281 - HIGH-POWER NPN SILICON TRANSISTORS (ETC)
  • 2N6282 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)
  • 2N6283 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)
  • 2N6284 - Complementary power Darlington transistors (STMicroelectronics)
  • 2N6285 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)
  • 2N6286 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)
  • 2N6288 - NPN PLASTIC POWER TRANSISTOR (CDIL)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2N6287-like datasheet