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2N6287 PNP Transistor

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Description

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6287 .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE = 750 (Min) @ IC = -10 Adc. Collector-Emitter Sustaining Voltage- VCEO(S.

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Datasheet Specifications

Part number
2N6287
Manufacturer
INCHANGE
File Size
191.75 KB
Datasheet
2N6287-INCHANGE.pdf
Description
PNP Transistor

Applications

* Intended for general purpose amplifier and low frequency switching applications, such as linear and switching industrial equipment. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base

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