Datasheet Details
| Part number | 2N6322 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 179.62 KB |
| Description | NPN Transistor |
| Datasheet |
 2N6322-INCHANGE.pdf
|
| Part number | 2N6322 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 179.62 KB |
| Description | NPN Transistor |
| Datasheet |
2N6322-INCHANGE.pdf
|
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) High Current Capability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and high-speed switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base voltage 5 V IC Collector C
📁 2N6322 Similar Datasheet