2N6322 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2N6322 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). High Current Capability. Wide Area of Safe Operation. Minimum Lot-to.

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Datasheet Specifications

Part number: 2N6322
Manufacturer: INCHANGE
File Size: 179.62 KB
Datasheet: 2N6322-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifier and high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base voltage 5 V IC Collector Current-Continuous 30 A IB Ba

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2N6322 NPN Transistor INCHANGE

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