Datasheet4U Logo Datasheet4U.com

2N6322 NPN Transistor

📥 Download Datasheet Datasheet Preview Page 1

Description

isc Silicon NPN Power Transistor 2N6322 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). High Current Capability. Wide Area of Safe Operation. Minimum Lot-to.

📥 Download Datasheet

Preview of 2N6322 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
2N6322
Manufacturer
INCHANGE
File Size
179.62 KB
Datasheet
2N6322-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for power amplifier and high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base voltage 5 V IC Collector Current-Continuous 30 A IB Ba

2N6322 Distributors

📁 Related Datasheet

  • 2N6323 - NPN Transistor (SSDI)
  • 2N6324 - NPN Transistor (Solid States Devices)
  • 2N6325 - NPN Transistor (SSDI)
  • 2N6326 - (2N6326 -2N6328) Silicon Power Transistor (SavantIC)
  • 2N6327 - (2N6326 -2N6328) Silicon Power Transistor (SavantIC)
  • 2N6328 - (2N6326 -2N6328) Silicon Power Transistor (SavantIC)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2N6322-like datasheet