2N6331 Silicon PNP Power Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : VCEO=-100V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operation A.

📥 Download Datasheet

2N6331 Datasheet Preview — Preview of 2N6331 PDF

Datasheet Specifications

Part number: 2N6331
Manufacturer: INCHANGE
File Size: 215.26 KB
Datasheet: 2N6331-INCHANGE.pdf
Description: Silicon PNP Power Transistor

Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PD Collector Power Dissipation @ T

2N6331 Distributors

📁 Related Datasheet

2N6330 2N6338 2N6339 2N6300 2N6301 2N6302

📌 All Tags

2N6331 Silicon PNP Power Transistor INCHANGE

INCHANGE 2N6331-like datasheet