2N6330
Magna
155.33kb
(2n6329 - 2n6331) pnp silicon power transistor.
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2N6330 - Silicon PNP Power Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: VCEO=-80V(Min) ·Minimum Lot-to-Lot variations for robust device
.
2N6331 - (2N6329 - 2N6331) PNP SIlicon Power Transistor
(Magna)
Free Datasheet http://..net/
Free Datasheet http://..net/
.
2N6331 - Silicon PNP Power Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: VCEO=-100V(Min) ·Minimum Lot-to-Lot variations for robust device.
2N6338 - NPN High Power Silicon Transistor
(VPT)
2N6338, 2N6341
NPN High Power Silicon Transistor
Features
• Available in JAN, JANTX, JANTXV per MIL-PRF-19500/509 • TO-3 (TO-204AA) Package • Designed.
2N6338 - Silicon NPN Transistor
(NTE)
2N6338 Silicon NPN Transistor
Power Amp, Switch TO−3 Type Package
Description: The 2N6338 is a silicon NPN transistor in a TO−3 type package designed.
2N6338 - NPN Transistor
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6338/D
High-Power NPN Silicon Transistors
. . . designed for use in industrial–milit.
2N6338 - NPN POWER SILICON TRANSISTOR
(Microsemi Corporation)
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/509 Devices 2N6338 2N6341 Qualified Level JANTX JANTXV
MAXIMUM RATINGS Rating.
2N6338 - Silicon NPN Power Transistors
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341
DESCRIPTION ·With TO-3 package ·Fast switchi.
2N6338 - High-Power NPN Silicon Transistors
(ON Semiconductor)
2N6338, 2N6341
High-Power NPN Silicon Transistors
. . . designed for use in industrial−military power amplifier and
switching circuit applications..
2N6339 - NPN Transistor
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6338/D
High-Power NPN Silicon Transistors
. . . designed for use in industrial–milit.
