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2N6304 Datasheet - Microsemi Corporation

2N6304 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Designed primarily for use in High Gain, low noise general purpose UHF amplifiers.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 3.5 50 Unit Vdc Vdc Vdc mA Thermal Data

2N6304 Features

* Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min) @ IC = 10 mAdc Maximum Available Gain = 14 dB (min) @ f = 500 MHz 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIP

2N6304_MicrosemiCorporation.pdf

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Datasheet Details

Part number:

2N6304

Manufacturer:

Microsemi ↗ Corporation

File Size:

86.00 KB

Description:

Rf & microwave discrete low power transistors.

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