2N6304 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Designed primarily for use in High Gain, low noise general purpose UHF amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 3.5 50 Unit Vdc Vdc Vdc mA Thermal Data
2N6304 Features
* Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min) @ IC = 10 mAdc Maximum Available Gain = 14 dB (min) @ f = 500 MHz 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIP
