2N6350 Datasheet - Microsemi Corporation

2N6350 NPN DARLINGTON POWER SILICON TRANSISTOR

TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices 2N6350 2N6351 2N6352 2N6353 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCER VCBO VEBO IB IC 2N6350 2N6352 80 80 2N6351 2N6353 150 150 Units Vdc Vdc Vdc Vdc Adc Adc Adc 12 6.0 0.5 5.0 10(1) 2N6350 2N6351 Total Power Dissipation @ TA = 250C @ TC = 1000C Operating & Storage Junc.

2N6350_MicrosemiCorporation.pdf