Datasheet4U Logo Datasheet4U.com

2N6329 Silicon PNP Power Transistor

📥 Download Datasheet Datasheet Preview Page 1

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : VCEO=-60V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operation AP.

📥 Download Datasheet

Preview of 2N6329 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
2N6329
Manufacturer
INCHANGE
File Size
215.39 KB
Datasheet
2N6329-INCHANGE.pdf
Description
Silicon PNP Power Transistor

Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=

2N6329 Distributors

📁 Related Datasheet

  • 2N6322 - NPN Transistor (Solid States Devices)
  • 2N6323 - NPN Transistor (SSDI)
  • 2N6324 - NPN Transistor (Solid States Devices)
  • 2N6325 - NPN Transistor (SSDI)
  • 2N6326 - (2N6326 -2N6328) Silicon Power Transistor (SavantIC)
  • 2N6327 - (2N6326 -2N6328) Silicon Power Transistor (SavantIC)

📌 All Tags

Silicon PNP Power Transistor INCHANGE
INCHANGE 2N6329-like datasheet