2N6329 Silicon PNP Power Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : VCEO=-60V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operation AP.

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Datasheet Specifications

Part number: 2N6329
Manufacturer: INCHANGE
File Size: 215.39 KB
Datasheet: 2N6329-INCHANGE.pdf
Description: Silicon PNP Power Transistor

Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=

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2N6329 Silicon PNP Power Transistor INCHANGE

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