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2N6560 Silicon NPN Power Transistor

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Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : VCEO=450V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operation AP.

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Datasheet Specifications

Part number
2N6560
Manufacturer
INCHANGE
File Size
213.92 KB
Datasheet
2N6560-INCHANGE.pdf
Description
Silicon NPN Power Transistor

Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=2

2N6560 Distributors

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Silicon NPN Power Transistor INCHANGE
INCHANGE 2N6560-like datasheet